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june 2015 docid027433 rev 3 1 / 13 this is information on a product in full production. www.st.com STL20N6F7 n - channel 60 v, 0.0046 typ., 20 a stripfet? f7 power mosfet in a powerflat? 3.3x3.3 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STL20N6F7 60 v 0.0054 20 a ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching a pplications description this n - channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on - state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package pack ing STL20N6F7 20n6f pow erflat? 3.3x3.3 tape and reel 1 2 3 4 powerfla t? 3.3x3.3 hv d(5, 6, 7, 8) g(4) s(1, 2, 3) 8 1 2 3 4 7 6 5 am15810v1
contents STL20N6F7 2 / 13 docid027433 rev 3 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteri stics .................................................................... 5 3 test circuits ..................................................................................... 7 4 package mechanical data ............................................................... 8 4.1 powerflat 3.3x3.3 package information ......................................... 9 5 revision history ............................................................................ 12
STL20N6F7 electrical rat ings docid027433 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t c = 25 c 100 a i d (1) drain current (continuous) at t c = 100 c 61 a i dm (1) (2) drain current (pulsed) 400 a i d (3) drain current (continuous) at t pcb = 25 c 20 a i d (3) drain current (continuous) at t pcb = 100 c 12 a i dm (2) (3) drain current (pulsed) 80 a p tot (1) total dissipation at t c = 25 c 78 w p tot (3) total dissipation at t pcb = 25 c 3 w t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) this value is rated according to r thj -c . (2) pulse width limited by safe operating area. (3) this value is rated according to r thj -pcb . table 3: thermal data symbol parameter value unit r thj -pcb (1) thermal resistance junction - pcb max. 42. 8 c/w r thj -case thermal resistance junction - case max. 1.6 c/w notes: (1) when mounted on fr - 4 board of 1 inch2, 2oz cu, t < 10 sec.
electrical characteristics STL20N6F7 4 / 13 docid027433 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = 1 ma, v gs = 0 v 60 v i dss zero gate voltage drain current v gs = 0 v v ds = 60 v 1 a i gss gate - body leakage current v gs = 20 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 10 a 0.0046 0.0054 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 1600 - pf c oss output capacitance - 880 - pf c rss reverse transfer capacitance - 66 - pf q g total gate charge v dd = 30 v, i d = 20 a, v gs = 10 v - 25 - nc q gs gate - source charge - 7.2 - nc q gd gate - drain charge - 8.1 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 10 a, r g = 4.7 , v gs = 10 v - 15 - ns t r rise time - 17.6 - ns t d(off) turn - off delay time - 24.4 - ns t f fall time - 7.8 - ns table 7: source - drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forwa rd on voltage i sd = 20 a, v gs = 0 - 1.2 v t rr reverse recovery time i d = 20 a, di/dt = 100 a/s v dd = 48 v - 39.6 ns q rr reverse recovery charge - 36 nc i rrm reverse recovery current - 1.8 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
STL20N6F7 electrical characteristics docid027433 rev 3 5 / 13 2.1 electrical characteristics figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
electrical characteristics STL20N6F7 6 / 13 docid027433 rev 3 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics
STL20N6F7 test circuits docid027433 rev 3 7 / 13 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
package mechanical data STL20N6F7 8 / 13 docid027433 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STL20N6F7 package mechanical data docid027433 rev 3 9 / 13 4.1 powerflat 3.3x3.3 package information figure 19 : powerflat? 3.3x3.3 hv package outline bot t om view side view top view 8465286_ a
package mechanical data STL20N6F7 10 / 13 docid027433 rev 3 table 8: powerflat? 3.3x3.3 hv package mechanical data dim. mm min. typ. max. a 0.70 0.80 0.90 b 0.25 0.30 0.39 c 0.14 0.15 0.20 d 3.10 3.30 3.50 d1 3.05 3.15 3.25 d2 2.15 2.25 2.35 e 0.55 0.65 0.75 e 3.10 3.30 3.50 e1 2.90 3.00 3.10 e2 1.60 1.70 1.8 0 h 0.25 0.40 0.55 k 0.65 0.75 0.85 l 030 0.45 0.60 l1 0.05 0.15 0.25 l2 0.5 ? 8 10 12
STL20N6F7 package mechanical data docid027433 rev 3 11 / 13 figure 20 : powerflat? 3.3x3.3 hv recommended footprint 8465286_footprint
revision history STL20N6F7 12 / 13 docid027433 rev 3 5 revision history table 9: document revision history date revision changes 28- jan - 2015 1 first release. 03- feb - 2015 2 updated table 2: "absolute maximum ratings" 10- jun - 2015 3 in section 2 electrical characteris tics: - updated table 5: dynamic - updated table 6: switching times - updated table 7: source - drain diode added section 2.1 electrical characteristics (curves)
STL20N6F7 docid027433 rev 3 13 / 13 important n otice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers sh ould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions d ifferent from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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